| PART |
Description |
Maker |
| PDTA123E PDTA123EE PDTA123EEF PDTA123EK PDTA123EU |
100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
PNP resistor-equipped transistors; R1 = 2.2 k楼?, R2 = 2.2 k楼?
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
|
NXP Semiconductors
|
| PDTC144TU PDTA144T PDTA144TE PDTA144TEF PDTA144TK |
PDTA144T series; PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = open
PNP resistor-equipped transistors; R1 = 47 kW-ohm, R2 = open
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| PUMB17 PEMB17 |
PEMB17; PUMB17; PNP/PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = 22 kOhm
PNP/PNP resistor-equipped transistors; R1 = 47 k-ohm, R2 = 22 k-ohm
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| PEMB30 PEMB30-PUMB30-15 |
PNP/PNP double resistor-equipped transistors; R1 = 2.2 kW, R2 = open
|
NXP Semiconductors
|
| PDTC114E PDTC114EE PDTC114EEF PDTC114EK PDTC114EM |
100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm NPN配电阻型晶体R1=10千欧姆，R2=10千欧
NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ
NPN resistor-equipped transistor; R1 = 10 k楼?, R2 = 10 k楼?
|
NXP Semiconductors N.V.
|
| PEMD13 PEMD13_1 |
NPN/PNP resistor-equipped transistors; R1 = 4.7 kohm/ R2 = 47 kohm
From old datasheet system
NPN/PNP RESISTOR-EQUIPPED TRANSISTORS; R1 = 4.7 KOHM, R2 = 47 KOHM
|
Philips Semiconductors
NXP Semiconductors
|
| PDTA124EE |
PNP resistor-equipped transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PDTA144 PDTA144EE |
PNP resistor-equipped transistor
|
PHILIPS[Philips Semiconductors]
|
| PDTA144EEF PDTA144 |
PNP resistor-equipped transistor
|
PHILIPS[Philips Semiconductors]
|
| PDTA124EEF |
PNP resistor-equipped transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
